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241
Identificación de áreas inundables del parque provincial San Cayetano (Corrientes, Argentina)
Published 2024-08-01“…Para concretar este objetivo se realizaron en primera instancia mediciones de Puntos de Apoyo Fotogramétricos (PAF) con un receptor GNSS geodésico South Galaxy G1 para otorgar mayor confiabilidad a los resultados generados en la etapa de postproceso y se sobrevoló el Parque San Cayetano con un Drone modelo Mavic 2 pro de la firma DJI, que cuenta con un sensor CMOS de 1” y resolución de 20 megapíxeles, lo que posibilitó la obtención de fotografías aéreas con características necesarias para la generación de un MDE. …”
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242
Design of High Performance Hybrid Type Digital-Feedback Low Drop-Out Regulator Using SSCG Technique
Published 2021-01-01“…The proposed circuit is designed using CMOS 55 nm process. The input voltage range is from 0.8 ~ 1.5 V and the measured output voltage range is 0.756 ~ 1.456 V. …”
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243
Millimeter-Wave All-Digital Phase-Locked Loop Using Reference Waveform Oversampling Techniques
Published 2024-01-01“…The proposed ADPLL is implemented in TSMC 28-nm LP CMOS. The prototype generates a 24–31-GHz output carrier with rms jitter of 237 fs while consuming only 12 mW. …”
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244
Heads-Up 3D Surgery under Low Light Intensity Conditions: New High-Sensitivity HD Camera for Ophthalmological Microscopes
Published 2019-01-01“…The luminance of the images observed through the eyepieces of the operating microscope and the image of a 3D system created by a high-sensitivity sensor Exmor R 3CMOS HD camera (Sony MCC-1000MD) were measured. Results. …”
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245
Design Simulation and Preparation of White OLED Microdisplay Based on Microcavity Structure Optimization
Published 2021-01-01“…The optimized OLED microdisplay structure is Si(CMOS)/ITO (35 nm)/MoO3 (2 nm)/CuPc (5 nm)/2-TNATA (20 nm)/NPB (10 nm)/NPB : rubrene (1.5%)ADN : DSA-Ph (5%) (25 nm)/TPBi (15 nm)/Alq3 (1.2 nm)/Mg (13 nm) : Ag (1%). …”
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246
Ferroelectric Transistor-Based Synaptic Crossbar Arrays: The Impact of Ferroelectric Thickness and Device-Circuit Interactions
Published 2024-01-01“…Ferroelectric transistors (FeFETs)-based crossbar arrays have shown immense promise for computing-in-memory (CiM) architectures targeted for neural accelerator designs. Offering CMOS compatibility, nonvolatility, compact bit cell, and CiM-amenable features, such as multilevel storage and voltage-driven conductance tuning, FeFETs are among the foremost candidates for synaptic devices. …”
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247
Neuronal Multi Unit Activity Processing with Metal Oxide Memristive Devices
Published 2024-12-01“…Furthermore, towards the integration of MIS with silicon chips, it is shown that it can reduce total system power consumption to below 1 µW, as RRAM encoding stage relaxes the signal preservation and noise requirements that challenge traditional complementary metal‐oxide‐semiconductor (CMOS) front‐ends. This eMUA‐MIS adaptation offers a viable pathway for developing more scalable and efficient BMIs for clinical use.…”
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248
Conteo de bacterias y levaduras en imágenes digitales
Published 2022-03-01“…<br /><strong>Métodos:</strong> el sensor empleado para la toma de imágenes de las muestras fue una cámara digital modelo HDCE-X, con un sensor CMOS de ½", con una resolución de 2592 píxeles por 1944 píxeles (5 Mp). …”
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249
Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress
Published 2024-01-01“…Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. …”
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250
Athermal Tantalum Pentoxide Mach-Zehnder Interferometers Based on Structural Compensation Method
Published 2025-01-01“…This work proves the effectiveness of structural compensation method on an already low thermo-optic photonic platform, paving the way towards realization of ultra-athermal integrated optical filters in a low-loss and CMOS-compatible platform.…”
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251
A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States
Published 2024-01-01“…Notably, the obtained Al-Si-Ge multi-heterojunction reconfigurable transistors constitute the first CMOS compatible platform to combine efficient polarity control enabling the envisioned performance enhancements of Ge based reconfigurable transistors.…”
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252
A Small-Area 2nd-Order Adder-Less Continuous-Time ΔΣ Modulator With Pulse Shaping FIR DAC for Magnetic Sensing
Published 2024-01-01“…The circuit has been designed in 65-nm CMOS technology, achieving a peak 82-dB SNDR and 91-dB DR within a signal bandwidth of 20 kHz and the CT<inline-formula> <tex-math notation="LaTeX">$\Delta \Sigma \text{M}$ </tex-math></inline-formula> consumes <inline-formula> <tex-math notation="LaTeX">$300 ~\mu \text{W}$ </tex-math></inline-formula> of power when clocked at 10.24 MHz. …”
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253
Volumetric trans-scale imaging of massive quantity of heterogeneous cell populations in centimeter-wide tissue and embryo
Published 2025-02-01“…Using a custom-made giant lens system with a magnification of ×2 and a numerical aperture (NA) of 0.25, and a CMOS camera with more than 100 megapixels, we built a trans-scale scope AMATERAS-2, and realized fluorescence imaging with a transverse spatial resolution of approximately 1.1 µm across an FOV of approximately 1.5×1.0 cm2. …”
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254
A High Performance Adaptive Digital LDO Regulator With Dithering and Dynamic Frequency Scaling for IoT Applications
Published 2020-01-01“…The proposed circuit is implemented in 28 nm CMOS process and occupies 0.016 mm<sup>2</sup> chip area.…”
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255
An Ultra-Low Power, Adaptive All-Digital Frequency-Locked Loop With Gain Estimation and Constant Current DCO
Published 2020-01-01“…The proposed design is integrated in an ADPLL for BLE transceiver and it is fabricated with 1P6M TSMC 55 nm CMOS technology. The all-digital adaptive FLL is fully synthesizable and its area is <inline-formula> <tex-math notation="LaTeX">$1800~\mu \text{m}^{2}$ </tex-math></inline-formula> with 1.233 K gate count. …”
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256
An Ultra-Low-Power 2.4 GHz All-Digital Phase-Locked Loop With Injection-Locked Frequency Multiplier and Continuous Frequency Tracking
Published 2021-01-01“…The proposed ILFM based ADPLL is fabricated in 55 nm CMOS technology and covers the operational frequency range of 2.402 GHz to 2.480 GHz with a reference frequency of 32 MHz. …”
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257
High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel
Published 2025-01-01“…Abstract The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic applications, but has thus far remained an outstanding challenge using conventional materials. …”
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258
System-Technology Co-Optimization for Dense Edge Architectures Using 3-D Integration and Nonvolatile Memory
Published 2024-01-01“…The framework builds on a systolic array accelerator to provide the design-technology characterization points using advanced imec A10 nanosheet CMOS node along with emerging, high-density voltage-gated spin-orbit torque (VGSOT) magnetic memories (MRAM), combined with memory-on-logic fine-pitch 3-D wafer-to-wafer hybrid bonding. …”
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