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    Titanium Silicide Formation in Presence of Oxygen by C. Nobili, F. Nava, G. Ottaviani, M. Costato, G. De Santi, G. Queirolo

    Published 1992-01-01
    “…Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. …”
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    A Guide to the Florida 4-H Council by Stacey E. Ellison, Tracy Tesdall, J. A. Rutledge, Joy C. Jordan, Wendi Armstrong

    Published 2014-12-01
    “…Ellison, Tracy Tesdall, J. A. Rutledge, Joy C. Jordan, and Wendi Armstrong, and published by the UF Department of 4-H Youth Development, October 2014. 4H GCM 12/4H315: A Guide to the Florida 4-H Council (ufl.edu) …”
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