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    Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems by Bharaneedharan Balasundaram, P. Suresh, Parvathy Rajendran, It Ee Lee, C. Ahamed Saleel

    Published 2025-01-01
    “…While GaN MOSFETs performed better in general and especially at high frequencies and temperatures, SiC MOSFETs showed some improvements over the conventional Si devices. …”
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