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    Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy by Arsenii A. Gavdush, Vladislav A. Zhelnov, Kirill B. Dolganov, Alexander A. Bogutskii, Sergey V. Garnov, Maria G. Burdanova, Dmitry S. Ponomarev, Qiwu Shi, Kirill I. Zaytsev, Gennadii A. Komandin

    Published 2025-01-01
    “…In this paper, we combine the Fourier-transform infrared (FTIR) spectroscopy, THz pulsed spectroscopy (TPS), and four-contact probe method to study the $$\hbox {VO}_2$$ films prepared by magnetron sputtering on a c-cut sapphire substrate. Considering different temperatures of a substrate and pressures of atmosphere, we reconstruct complex dielectric permittivity of $$\hbox {VO}_2$$ film in the frequency range of 0.2–150 THz, along with its static conductivity. …”
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