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    Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation by Meihua Fang, Tao Fei, Mengying Bai, Yipan Guo, Jingpeng Lv, Ronghui Quan, Hongbo Lu, Huiping Liu

    Published 2020-01-01
    “…Then, thermal annealing was carried out at 120°C. We found that the proportion of defect recovery after annealing decreases with increasing irradiation fluence. …”
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