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    2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates

    2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates by Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta

    Published 2025-01-01
    Subjects: “…AlGaN-channel HEMT…”
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