Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ by El-Yazami Chaimae, Bri Seddik, El Fadl Adiba

Subjects: Get full text

Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communicati... by Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal

Subjects: “…2DEG…”
Get full text