Investigation for the Temperature Dependence of 2D Electron Gas Behaviors in GaN‐based Multichannel Heterostructures Systems by Wentao Zhang, Ang Li, Chong Wang, Kai Liu, Kuo Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao

Subjects: “…2DEG…”
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Development of a Nb‐Based Semiconductor‐Superconductor Hybrid 2DEG Platform by Sjoerd Telkamp, Tommaso Antonelli, Clemens Todt, Manuel Hinderling, Marco Coraiola, Daniel Haxell, Sofieke C. ten Kate, Deividas Sabonis, Peng Zeng, Rüdiger Schott, Erik Cheah, Christian Reichl, Fabrizio Nichele, Filip Krizek, Werner Wegscheider

Subjects: “…2DEG…”
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Biomolecular Detection Using AlN/<italic>&#x03B2;</italic>-Ga₂O₃ MOSHEMT: A Machine Learning-Assisted Analytical and Simulation Framework by Aishwarya Tomar, Apurba Chakraborty, Rahul Kumar

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Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ by El-Yazami Chaimae, Bri Seddik, El Fadl Adiba

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2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect by V. Stanishev, V. Stanishev, I. Streicher, I. Streicher, A. Papamichail, V. Rindert, P. P. Paskov, S. Leone, V. Darakchieva, V. Darakchieva

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Investigation of the impact of the GaN cap layer on DC and RF performance in N-polar AlGaN/GaN HEMTs by Chumki Das, Kaushik Mazumdar

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AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance by Quan Dai, Qingru Wang, Xinkun Zhang, Gaofei Zhi, Xinlu Yang, Yu Zhou, Qian Li, Xiaoning Zhan, Xin Chen, Yaozong Zhong, Jianxun Liu, Qian Sun, Hui Yang

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Structures of vortex in Co-doped BaFe2As2 iron superconductors with different doping level by scanning Hall probe microscopy by Hussein Ali Mohammed

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Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT by Palash Das, Dhrubes Biswas

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Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric‐Double‐Layer Gating by Jaehyeok Lee, Hyeongmin Cho, Jisung Park, Bongju Kim, Darrell G. Schlom, Kookrin Char

Subjects: “…2DEG…”
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Numerical study of 2DEG carrier density of quaternary AlInGaN-based T-gate MOSHEMT grown on UWBG-β-Ga2O3 substrate by Noual Amina, Touati Zine-eddine, Messai Zitouni, Saidani Okba, Abderrahim Yousfi

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Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs by Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin

Subjects: “…2DEG…”
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The phenomenon of magnetic vortices superconducting for (Sr2RuO4) by Hussein Ali Mohammed

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Low-Pressure Chemical Vapor Deposition SiN_x Process Study and Its Impact on Interface Characteristics of AlGaN/GaN MISHEMTs by Hu Sun, Qian Fan, Xianfeng Ni, Qiang Luo, Xing Gu

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Experimental Evidence of Electron‐enhanced Interfacial Thermal Conductance Through Two‐Dimensional Electron Gas by Xing Fan, Yi Tao, Wangwei Zhang, Chen Li, Bingxin Li, Ziyuan Ma, Zhiming Geng, Xue‐Jun Yan, Ming‐Hui Lu, Di Wu, Deyu Li, Hong Lu, Yan‐Feng Chen

Subjects: “…2D electron gas (2DEG)…”
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