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    CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION

    CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION by N. A. Poklonski, A. I. Kovalev, N. I. Gorbachuk, S. V. Shpakovski

    Published 2018-06-01
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