Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction
We demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm laser that illuminates the entire Schottky gate region at 280 μW/mm2. Light B is a 670-nm laser that loc...
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AIP Publishing LLC
2024-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0233346 |
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| _version_ | 1850057179496710144 |
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| author | Takuya Kawazu |
| author_facet | Takuya Kawazu |
| author_sort | Takuya Kawazu |
| collection | DOAJ |
| description | We demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm laser that illuminates the entire Schottky gate region at 280 μW/mm2. Light B is a 670-nm laser that locally illuminates the ungated region at 0.4 μW. When Vg = 0 V, Light B doubles ISG for Light A. At Vg = 87 mV, ISG is generated only when both Light A and B are irradiated simultaneously, like the logical operation A∩B. When Vg = 165 mV, ISG is induced only for the illumination of Light A alone, like A∩B̄. |
| format | Article |
| id | doaj-art-ff949748e8e3473b92b59833185f1afe |
| institution | DOAJ |
| issn | 2158-3226 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-ff949748e8e3473b92b59833185f1afe2025-08-20T02:51:30ZengAIP Publishing LLCAIP Advances2158-32262024-12-011412125007125007-510.1063/5.0233346Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunctionTakuya Kawazu0National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JapanWe demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm laser that illuminates the entire Schottky gate region at 280 μW/mm2. Light B is a 670-nm laser that locally illuminates the ungated region at 0.4 μW. When Vg = 0 V, Light B doubles ISG for Light A. At Vg = 87 mV, ISG is generated only when both Light A and B are irradiated simultaneously, like the logical operation A∩B. When Vg = 165 mV, ISG is induced only for the illumination of Light A alone, like A∩B̄.http://dx.doi.org/10.1063/5.0233346 |
| spellingShingle | Takuya Kawazu Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction AIP Advances |
| title | Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction |
| title_full | Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction |
| title_fullStr | Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction |
| title_full_unstemmed | Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction |
| title_short | Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction |
| title_sort | gate voltage tuning of photo responses in n algaas gaas algaas double heterojunction |
| url | http://dx.doi.org/10.1063/5.0233346 |
| work_keys_str_mv | AT takuyakawazu gatevoltagetuningofphotoresponsesinnalgaasgaasalgaasdoubleheterojunction |