Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction
We demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm laser that illuminates the entire Schottky gate region at 280 μW/mm2. Light B is a 670-nm laser that loc...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2024-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0233346 |
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| Summary: | We demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm laser that illuminates the entire Schottky gate region at 280 μW/mm2. Light B is a 670-nm laser that locally illuminates the ungated region at 0.4 μW. When Vg = 0 V, Light B doubles ISG for Light A. At Vg = 87 mV, ISG is generated only when both Light A and B are irradiated simultaneously, like the logical operation A∩B. When Vg = 165 mV, ISG is induced only for the illumination of Light A alone, like A∩B̄. |
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| ISSN: | 2158-3226 |