Selective metal passivation by vapor-dosed phosphonic acid inhibitors for area-selective atomic layer deposition of SiO2 thin films
Abstract Aiming for atomic-scale precision alignment for advanced semiconductor devices, area-selective atomic layer deposition (AS-ALD) has garnered substantial attention because of its bottom-up nature that allows precise control of material deposition exclusively on desired areas. In this study,...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2025-05-01
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| Series: | Nano Convergence |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s40580-025-00490-5 |
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