The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer
We reported the effect of bandgap grading of absorbers on the performance of a-Si1−xGex:H cells employing μc-SiOx:H n-layer. The influence of bandgap grading widths extended from the p-layer (the p/i grading) and the n-layer (the i/n grading) to the absorber on the cell performance which were system...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/364638 |
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