Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors

Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors

As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of car...

Full description

Saved in:
Bibliographic Details
Main Authors: A. El Abbassi, Y. Amhouche, E. Bendada, R. Rmaily, K. Raïs
Format: Article
Language:English
Published: Wiley 2001-01-01
Series:Active and Passive Electronic Components
Subjects:
MOS Transistor
Surface roughness
Effective mobility
Series resistance.
Online Access:http://dx.doi.org/10.1155/2001/75780
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain resistance Rsd influence strongly the effective mobility.
ISSN:0882-7516
1563-5031

Similar Items