High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics
This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-InGaZnO thin-film transistors. The input voltage ra...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10637919/ |
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| author | Sunaina Priyadarshi Abidur Rahaman Mohammad Masum Billah Sabiqun Nahar Md. Redowan Mahmud Arnob Jin Jang |
| author_facet | Sunaina Priyadarshi Abidur Rahaman Mohammad Masum Billah Sabiqun Nahar Md. Redowan Mahmud Arnob Jin Jang |
| author_sort | Sunaina Priyadarshi |
| collection | DOAJ |
| description | This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-InGaZnO thin-film transistors. The input voltage range of 2 V~10 V could be shifted to 1.2 V ~ 4.41 V output voltage. The rising and falling times are less than 400 ns at the operational frequency of 50 kHz. Also, the multiple output power supply of 6 V, 3 V, and 1.8 V for interface circuits has been possible with a single supply of 10 V. The proposed LDS shows a switching power consumption of 95.57 pW and area of 0.023 mm2. |
| format | Article |
| id | doaj-art-fb2941ba9e5f49d489a9986e06338bee |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-fb2941ba9e5f49d489a9986e06338bee2025-01-28T00:00:37ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011258759310.1109/JEDS.2024.343821010637919High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface ElectronicsSunaina Priyadarshi0https://orcid.org/0000-0003-2521-2379Abidur Rahaman1https://orcid.org/0000-0002-9100-4204Mohammad Masum Billah2https://orcid.org/0000-0001-7895-5948Sabiqun Nahar3https://orcid.org/0000-0002-0251-6794Md. Redowan Mahmud Arnob4Jin Jang5https://orcid.org/0000-0002-7572-5669Department of Information Display, ADRC, Kyung Hee University, Seoul, South KoreaDepartment of Information Display, ADRC, Kyung Hee University, Seoul, South KoreaDepartment of Electrical and Electronic Engineering, Islamic University of Technology, Gazipur, BangladeshDepartment of Information Display, ADRC, Kyung Hee University, Seoul, South KoreaDepartment of Information Display, ADRC, Kyung Hee University, Seoul, South KoreaDepartment of Information Display, ADRC, Kyung Hee University, Seoul, South KoreaThis article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-InGaZnO thin-film transistors. The input voltage range of 2 V~10 V could be shifted to 1.2 V ~ 4.41 V output voltage. The rising and falling times are less than 400 ns at the operational frequency of 50 kHz. Also, the multiple output power supply of 6 V, 3 V, and 1.8 V for interface circuits has been possible with a single supply of 10 V. The proposed LDS shows a switching power consumption of 95.57 pW and area of 0.023 mm2.https://ieeexplore.ieee.org/document/10637919/LTPOTFTthin film transistordual-gateSPICE simulationlevel down shifter |
| spellingShingle | Sunaina Priyadarshi Abidur Rahaman Mohammad Masum Billah Sabiqun Nahar Md. Redowan Mahmud Arnob Jin Jang High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics IEEE Journal of the Electron Devices Society LTPO TFT thin film transistor dual-gate SPICE simulation level down shifter |
| title | High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics |
| title_full | High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics |
| title_fullStr | High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics |
| title_full_unstemmed | High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics |
| title_short | High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics |
| title_sort | high speed level down shifter using ltpo tfts for low power and interface electronics |
| topic | LTPO TFT thin film transistor dual-gate SPICE simulation level down shifter |
| url | https://ieeexplore.ieee.org/document/10637919/ |
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