High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics
This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-InGaZnO thin-film transistors. The input voltage ra...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10637919/ |
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| Summary: | This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-InGaZnO thin-film transistors. The input voltage range of 2 V~10 V could be shifted to 1.2 V ~ 4.41 V output voltage. The rising and falling times are less than 400 ns at the operational frequency of 50 kHz. Also, the multiple output power supply of 6 V, 3 V, and 1.8 V for interface circuits has been possible with a single supply of 10 V. The proposed LDS shows a switching power consumption of 95.57 pW and area of 0.023 mm2. |
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| ISSN: | 2168-6734 |