The influence of oxygen as impurity substitution defects on the electronic structure of binary graphene
The paper is devoted to the study of the effect of oxygen as an impurity substitution defect in single-layer and double-layer graphene planes on the electronic properties of these structures. The van der Waals interaction is studied for the electronic properties of paired graphene planes of the...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-09-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/4%20(172)/42-46%20%D0%91%D0%BE%D0%BB%D0%BE%D1%82%D0%BE%D0%B2%20%D0%92.%20%D0%92.,%20%D0%A1%D0%B0%D1%87%D0%BA%D0%BE%D0%B2%20%D0%92.%20%D0%90..pdf |
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| Summary: | The paper is devoted to the study of the effect of oxygen as
an impurity substitution defect in single-layer and double-layer
graphene planes on the electronic properties of these structures.
The van der Waals interaction is studied for the electronic
properties of paired graphene planes of the substitution type
for an impurity oxygen atom. Calculations of the «ab initio»
electronic zone structure of the studied objects are made. The
results obtained are applicable to the analysis of the zone structure
of multi-wall carbon tubes containing defects. |
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| ISSN: | 1813-8225 2541-7541 |