Degradation of VDMOSFET by Heavy Ion Irradiations
This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental obs...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2000-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2000/90585 |
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| _version_ | 1832561815137026048 |
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| author | C. Salame F. Pelanchon P. Mialhe |
| author_facet | C. Salame F. Pelanchon P. Mialhe |
| author_sort | C. Salame |
| collection | DOAJ |
| description | This article focuses on the effect of the heavy ions irradiations on the electrical
characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field
Effect Transistor) devices. A summary of the total dose effects and the single event effects
is covered to evaluate the experimental observations. Device degradations due to the hot
carriers junction avalanche are studied by a physical parameters extraction method,
leading to an understanding of the degradation processes. Results show that a protective
resistor load can reduce the degradation effect in the device. |
| format | Article |
| id | doaj-art-fa2597ed5c7e498ab74efd6a762771e1 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2000-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-fa2597ed5c7e498ab74efd6a762771e12025-02-03T01:24:18ZengWileyActive and Passive Electronic Components0882-75161563-50312000-01-0122426528210.1155/2000/90585Degradation of VDMOSFET by Heavy Ion IrradiationsC. Salame0F. Pelanchon1P. Mialhe2Centre d'Etudes Fondamentales, Université de Perpignan, 52- av de Villeneuve, Perpignan Cedex 66860, FranceCentre d'Etudes Fondamentales, Université de Perpignan, 52- av de Villeneuve, Perpignan Cedex 66860, FranceCentre d'Etudes Fondamentales, Université de Perpignan, 52- av de Villeneuve, Perpignan Cedex 66860, FranceThis article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. Device degradations due to the hot carriers junction avalanche are studied by a physical parameters extraction method, leading to an understanding of the degradation processes. Results show that a protective resistor load can reduce the degradation effect in the device.http://dx.doi.org/10.1155/2000/90585Hot-holestransistor degradationfast surface statesionization radiation. |
| spellingShingle | C. Salame F. Pelanchon P. Mialhe Degradation of VDMOSFET by Heavy Ion Irradiations Active and Passive Electronic Components Hot-holes transistor degradation fast surface states ionization radiation. |
| title | Degradation of VDMOSFET by Heavy Ion Irradiations |
| title_full | Degradation of VDMOSFET by Heavy Ion Irradiations |
| title_fullStr | Degradation of VDMOSFET by Heavy Ion Irradiations |
| title_full_unstemmed | Degradation of VDMOSFET by Heavy Ion Irradiations |
| title_short | Degradation of VDMOSFET by Heavy Ion Irradiations |
| title_sort | degradation of vdmosfet by heavy ion irradiations |
| topic | Hot-holes transistor degradation fast surface states ionization radiation. |
| url | http://dx.doi.org/10.1155/2000/90585 |
| work_keys_str_mv | AT csalame degradationofvdmosfetbyheavyionirradiations AT fpelanchon degradationofvdmosfetbyheavyionirradiations AT pmialhe degradationofvdmosfetbyheavyionirradiations |