A novel model of photoacoustic and thermalelectronic waves in semiconductor material
We explore theoretically the photoacoustic wave propagation created by the photoexcited carrier diffusion in the thermoelastic domain. Consideration is given to the coupling of acoustic and thermomechanical waves. Under the influence of photothermal and thermoelasticity theories, the governing equat...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0236367 |
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| author | M. H. Raddadi Kh. Lotfy A. A. El-Bary A. M. S. Mahdy E. S. Elidy |
| author_facet | M. H. Raddadi Kh. Lotfy A. A. El-Bary A. M. S. Mahdy E. S. Elidy |
| author_sort | M. H. Raddadi |
| collection | DOAJ |
| description | We explore theoretically the photoacoustic wave propagation created by the photoexcited carrier diffusion in the thermoelastic domain. Consideration is given to the coupling of acoustic and thermomechanical waves. Under the influence of photothermal and thermoelasticity theories, the governing equations are derived. The photoacoustic wave creation is independent of the electron–phonon and electron–hole thermalization and results from the thermoelastic stress brought on by the increase in temperature generated by the light. Considering the optical, elastic, and thermoelastic properties of semiconductor material, photoacoustic signals are predicted by solving a thermal diffusion issue and then a thermoelastic problem in sequence. Using the harmonic wave method, we can solve the mathematical model. All the physical fields in the physical domain can be obtained from the numerical solutions of the mathematical model, including displacements, temperature, acoustic pressure, mechanical distributions, and carrier density diffusion. Two- and three-dimensional (2D and 3D) graphical representations of the thermoelectric, thermo-energy, and thermoelastic parameters are created, and their impacts are compared and analyzed. |
| format | Article |
| id | doaj-art-f9349176a83c49c3833f328a70581d09 |
| institution | Kabale University |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-f9349176a83c49c3833f328a70581d092025-02-03T16:40:42ZengAIP Publishing LLCAIP Advances2158-32262025-01-01151015207015207-1710.1063/5.0236367A novel model of photoacoustic and thermalelectronic waves in semiconductor materialM. H. Raddadi0Kh. Lotfy1A. A. El-Bary2A. M. S. Mahdy3E. S. Elidy4Department of Mathematics, College of Science, Taibah University, P.O. Box 344, Al-Madinah Al-Munawarah 30002, Saudi ArabiaDepartment of Mathematics, College of Science, Taibah University, P.O. Box 344, Al-Madinah Al-Munawarah 30002, Saudi ArabiaArab Academy for Science, Technology and Maritime Transport, P.O. Box 1029, Alexandria, EgyptDepartment of Mathematics and Statistics, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi ArabiaDepartment of Mathematics, Faculty of Science, Zagazig University, P.O. Box 44519, Zagazig, EgyptWe explore theoretically the photoacoustic wave propagation created by the photoexcited carrier diffusion in the thermoelastic domain. Consideration is given to the coupling of acoustic and thermomechanical waves. Under the influence of photothermal and thermoelasticity theories, the governing equations are derived. The photoacoustic wave creation is independent of the electron–phonon and electron–hole thermalization and results from the thermoelastic stress brought on by the increase in temperature generated by the light. Considering the optical, elastic, and thermoelastic properties of semiconductor material, photoacoustic signals are predicted by solving a thermal diffusion issue and then a thermoelastic problem in sequence. Using the harmonic wave method, we can solve the mathematical model. All the physical fields in the physical domain can be obtained from the numerical solutions of the mathematical model, including displacements, temperature, acoustic pressure, mechanical distributions, and carrier density diffusion. Two- and three-dimensional (2D and 3D) graphical representations of the thermoelectric, thermo-energy, and thermoelastic parameters are created, and their impacts are compared and analyzed.http://dx.doi.org/10.1063/5.0236367 |
| spellingShingle | M. H. Raddadi Kh. Lotfy A. A. El-Bary A. M. S. Mahdy E. S. Elidy A novel model of photoacoustic and thermalelectronic waves in semiconductor material AIP Advances |
| title | A novel model of photoacoustic and thermalelectronic waves in semiconductor material |
| title_full | A novel model of photoacoustic and thermalelectronic waves in semiconductor material |
| title_fullStr | A novel model of photoacoustic and thermalelectronic waves in semiconductor material |
| title_full_unstemmed | A novel model of photoacoustic and thermalelectronic waves in semiconductor material |
| title_short | A novel model of photoacoustic and thermalelectronic waves in semiconductor material |
| title_sort | novel model of photoacoustic and thermalelectronic waves in semiconductor material |
| url | http://dx.doi.org/10.1063/5.0236367 |
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