Study of the Cu(In,Ga)Se2 crystallization process through a combination of in-situ characterization techniques
This study investigates the crystallization process of amorphous Cu(In,Ga)Se _2 (CIGSe) through in-situ characterization techniques, specifically Raman spectroscopy, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Amorphous CIGSe was deposited through sputtering of a ternary tar...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | JPhys Energy |
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| Online Access: | https://doi.org/10.1088/2515-7655/ade5c6 |
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| author | José Fonseca Carlos J Tavares Alec P LaGrow Zakaria Ziadi Oleksandr Bondarchuk Sascha Sadewasser |
| author_facet | José Fonseca Carlos J Tavares Alec P LaGrow Zakaria Ziadi Oleksandr Bondarchuk Sascha Sadewasser |
| author_sort | José Fonseca |
| collection | DOAJ |
| description | This study investigates the crystallization process of amorphous Cu(In,Ga)Se _2 (CIGSe) through in-situ characterization techniques, specifically Raman spectroscopy, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Amorphous CIGSe was deposited through sputtering of a ternary target with simultaneous supply of selenium by evaporation. A Se capping layer revealed to enhance crystallization at lower temperatures, yielding larger crystallites at 400 °C and larger crystal grains after the crystallization process. The A _1 Raman mode of CIGSe appears at a lower temperature and with higher intensity in samples with Se capping compared to those without capping layer. The effect of temperature on the Raman spectra was considered by fitting post-crystallization data with a three-phonon coupling model, allowing for deconvolution of the thermal and material crystallization effects. In-situ XRD data corroborate the Raman data and revealed the formation of MoSe _2 and Cu _2 Se secondary phases at 250 °C and 400 °C, respectively. Moreover, in-situ TEM allowed to further assess crystal growth during the crystallization process. |
| format | Article |
| id | doaj-art-f6446f59cd594018a5aed4792aef0fe4 |
| institution | Kabale University |
| issn | 2515-7655 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | JPhys Energy |
| spelling | doaj-art-f6446f59cd594018a5aed4792aef0fe42025-08-20T03:27:58ZengIOP PublishingJPhys Energy2515-76552025-01-017303502210.1088/2515-7655/ade5c6Study of the Cu(In,Ga)Se2 crystallization process through a combination of in-situ characterization techniquesJosé Fonseca0https://orcid.org/0009-0005-2049-1681Carlos J Tavares1https://orcid.org/0000-0001-5757-0096Alec P LaGrow2Zakaria Ziadi3https://orcid.org/0000-0002-3659-888XOleksandr Bondarchuk4https://orcid.org/0000-0001-7380-8930Sascha Sadewasser5https://orcid.org/0000-0001-8384-6025INL—International Iberian Nanotechnology Laboratory , Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal; Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho , Campus de Gualtar, 4710-057 Braga, PortugalINL—International Iberian Nanotechnology Laboratory , Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal; Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho , Campus de Gualtar, 4710-057 Braga, PortugalOkinawa Institute of Science and Technology Graduate University , Kunigami-gun, Okinawa 904-0495, JapanOkinawa Institute of Science and Technology Graduate University , Kunigami-gun, Okinawa 904-0495, JapanINL—International Iberian Nanotechnology Laboratory , Av. Mestre José Veiga s/n, 4715-330 Braga, PortugalINL—International Iberian Nanotechnology Laboratory , Av. Mestre José Veiga s/n, 4715-330 Braga, PortugalThis study investigates the crystallization process of amorphous Cu(In,Ga)Se _2 (CIGSe) through in-situ characterization techniques, specifically Raman spectroscopy, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Amorphous CIGSe was deposited through sputtering of a ternary target with simultaneous supply of selenium by evaporation. A Se capping layer revealed to enhance crystallization at lower temperatures, yielding larger crystallites at 400 °C and larger crystal grains after the crystallization process. The A _1 Raman mode of CIGSe appears at a lower temperature and with higher intensity in samples with Se capping compared to those without capping layer. The effect of temperature on the Raman spectra was considered by fitting post-crystallization data with a three-phonon coupling model, allowing for deconvolution of the thermal and material crystallization effects. In-situ XRD data corroborate the Raman data and revealed the formation of MoSe _2 and Cu _2 Se secondary phases at 250 °C and 400 °C, respectively. Moreover, in-situ TEM allowed to further assess crystal growth during the crystallization process.https://doi.org/10.1088/2515-7655/ade5c6CIGSselenizationcrystallizationin-situ studiesin-situ Raman spectroscopyin-situ XRD |
| spellingShingle | José Fonseca Carlos J Tavares Alec P LaGrow Zakaria Ziadi Oleksandr Bondarchuk Sascha Sadewasser Study of the Cu(In,Ga)Se2 crystallization process through a combination of in-situ characterization techniques JPhys Energy CIGS selenization crystallization in-situ studies in-situ Raman spectroscopy in-situ XRD |
| title | Study of the Cu(In,Ga)Se2 crystallization process through a combination of in-situ characterization techniques |
| title_full | Study of the Cu(In,Ga)Se2 crystallization process through a combination of in-situ characterization techniques |
| title_fullStr | Study of the Cu(In,Ga)Se2 crystallization process through a combination of in-situ characterization techniques |
| title_full_unstemmed | Study of the Cu(In,Ga)Se2 crystallization process through a combination of in-situ characterization techniques |
| title_short | Study of the Cu(In,Ga)Se2 crystallization process through a combination of in-situ characterization techniques |
| title_sort | study of the cu in ga se2 crystallization process through a combination of in situ characterization techniques |
| topic | CIGS selenization crystallization in-situ studies in-situ Raman spectroscopy in-situ XRD |
| url | https://doi.org/10.1088/2515-7655/ade5c6 |
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