Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress
The short-circuit (SC) robustness of SiC MOSFETs is critical for high-power applications, yet 1.2 kV devices often struggle to meet the industry-standard SC withstand time (SCWT) under practical operating conditions. Despite growing interest in higher voltage classes, no prior study has systematical...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/1/102 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|