A New Junction Parameters Determination Using the Double Exponential Model
A double exponential model is used to characterize the junction properties of microelectronic devices. A method is developed to extract the physical junction parameters from the current-voltage characteristics. The influence of the start values used for the computing processes are considered and the...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510213496 |
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| _version_ | 1832549414041812992 |
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| author | S. Dib A. Khoury F. PéLanchon P. Mialhe |
| author_facet | S. Dib A. Khoury F. PéLanchon P. Mialhe |
| author_sort | S. Dib |
| collection | DOAJ |
| description | A double exponential model is used to characterize the junction properties of microelectronic devices. A method is developed to extract the physical junction parameters from the current-voltage characteristics. The influence of the start values used for the computing processes are considered and the accuracy is discussed from results of simulated extractions. An experimental test considers the emitter-base junction of bipolar transistors. |
| format | Article |
| id | doaj-art-f58d30566ac8477888255f45dd3421c3 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2002-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-f58d30566ac8477888255f45dd3421c32025-02-03T06:11:26ZengWileyActive and Passive Electronic Components0882-75161563-50312002-01-0125322523210.1080/08827510213496A New Junction Parameters Determination Using the Double Exponential ModelS. Dib0A. Khoury1F. PéLanchon2P. MialheCentre d'Etudes Fondamentales, Université de Perpignan, 52 Avenue de Villeneuve, Perpignan Cedex 66 860, FranceCentre d'Etudes Fondamentales, Université de Perpignan, 52 Avenue de Villeneuve, Perpignan Cedex 66 860, FranceLP2A, Deépartement de Physique, Université Libanaise-Faculté de Sciences II, BP, Jdeidet 90656, Libyan Arab JamahiriyaA double exponential model is used to characterize the junction properties of microelectronic devices. A method is developed to extract the physical junction parameters from the current-voltage characteristics. The influence of the start values used for the computing processes are considered and the accuracy is discussed from results of simulated extractions. An experimental test considers the emitter-base junction of bipolar transistors.http://dx.doi.org/10.1080/08827510213496 |
| spellingShingle | S. Dib A. Khoury F. PéLanchon P. Mialhe A New Junction Parameters Determination Using the Double Exponential Model Active and Passive Electronic Components |
| title | A New Junction Parameters Determination Using the Double Exponential Model |
| title_full | A New Junction Parameters Determination Using the Double Exponential Model |
| title_fullStr | A New Junction Parameters Determination Using the Double Exponential Model |
| title_full_unstemmed | A New Junction Parameters Determination Using the Double Exponential Model |
| title_short | A New Junction Parameters Determination Using the Double Exponential Model |
| title_sort | new junction parameters determination using the double exponential model |
| url | http://dx.doi.org/10.1080/08827510213496 |
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