A New Junction Parameters Determination Using the Double Exponential Model
A double exponential model is used to characterize the junction properties of microelectronic devices. A method is developed to extract the physical junction parameters from the current-voltage characteristics. The influence of the start values used for the computing processes are considered and the...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510213496 |
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| Summary: | A double exponential model is used to characterize the junction properties of microelectronic devices. A method is developed to extract the physical junction parameters from the current-voltage characteristics. The influence of the start values used for the computing processes are considered and the accuracy is discussed from results of simulated extractions. An experimental test considers the emitter-base junction of bipolar transistors. |
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| ISSN: | 0882-7516 1563-5031 |