APA (7th ed.) Citation

Du, J., Pu, T., Li, X., Li, L., Ao, J., & Gao, H. Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth. MDPI AG.

Chicago Style (17th ed.) Citation

Du, Jiyao, Taofei Pu, Xiaobo Li, Liuan Li, Jinping Ao, and Hongwei Gao. Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth. MDPI AG.

MLA (9th ed.) Citation

Du, Jiyao, et al. Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth. MDPI AG.