Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure
Hydrogenated nanocrystalline silicon films were prepared by hot-wire method at low substrate temperature (200∘C) without hydrogen dilution of silane (SiH4). A variety of techniques, including Raman spectroscopy, low angle X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, atomi...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2011-01-01
|
| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2011/242398 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832551711283085312 |
|---|---|
| author | V. S. Waman A. M. Funde M. M. Kamble M. R. Pramod R. R. Hawaldar D. P. Amalnerkar V. G. Sathe S. W. Gosavi S. R. Jadkar |
| author_facet | V. S. Waman A. M. Funde M. M. Kamble M. R. Pramod R. R. Hawaldar D. P. Amalnerkar V. G. Sathe S. W. Gosavi S. R. Jadkar |
| author_sort | V. S. Waman |
| collection | DOAJ |
| description | Hydrogenated nanocrystalline silicon films were prepared by hot-wire method at low substrate temperature (200∘C) without hydrogen dilution of silane (SiH4). A variety of techniques, including Raman spectroscopy, low angle X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, atomic force microscopy (AFM), and UV-visible (UV-Vis) spectroscopy, were used to characterize these films for structural and optical properties. Films are grown at reasonably high deposition rates (>15 Å/s), which are very much appreciated for the fabrication of cost effective devices. Different crystalline fractions (from 2.5% to 63%) and crystallite size (3.6–6.0 nm) can be achieved by controlling the process pressure. It is observed that with increase in process pressure, the hydrogen bonding in the films shifts from Si–H to Si–H2 and (Si–H2)n complexes. The band gaps of the films are found in the range 1.83–2.11 eV, whereas the hydrogen content remains <9 at.% over the entire range of process pressure studied. The ease of depositing films with tunable band gap is useful for fabrication of tandem solar cells. A correlation between structural and optical properties has been found and discussed in detail. |
| format | Article |
| id | doaj-art-f49d67da519a4a41a1fddf4b9ac3d97a |
| institution | Kabale University |
| issn | 1687-9503 1687-9511 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Nanotechnology |
| spelling | doaj-art-f49d67da519a4a41a1fddf4b9ac3d97a2025-02-03T06:00:46ZengWileyJournal of Nanotechnology1687-95031687-95112011-01-01201110.1155/2011/242398242398Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process PressureV. S. Waman0A. M. Funde1M. M. Kamble2M. R. Pramod3R. R. Hawaldar4D. P. Amalnerkar5V. G. Sathe6S. W. Gosavi7S. R. Jadkar8School of Energy Studies, University of Pune, Pune 411 007, IndiaSchool of Energy Studies, University of Pune, Pune 411 007, IndiaSchool of Energy Studies, University of Pune, Pune 411 007, IndiaSchool of Energy Studies, University of Pune, Pune 411 007, IndiaCenter for Materials for Electronics Technology (C-MET), Panchawati, Pune 411 008, IndiaCenter for Materials for Electronics Technology (C-MET), Panchawati, Pune 411 008, IndiaUGC-DAE CSR, University Campus, Khandwa Road, Indore 452 017, IndiaDepartment of Physics, University of Pune, Pune 411 007, IndiaDepartment of Physics, University of Pune, Pune 411 007, IndiaHydrogenated nanocrystalline silicon films were prepared by hot-wire method at low substrate temperature (200∘C) without hydrogen dilution of silane (SiH4). A variety of techniques, including Raman spectroscopy, low angle X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, atomic force microscopy (AFM), and UV-visible (UV-Vis) spectroscopy, were used to characterize these films for structural and optical properties. Films are grown at reasonably high deposition rates (>15 Å/s), which are very much appreciated for the fabrication of cost effective devices. Different crystalline fractions (from 2.5% to 63%) and crystallite size (3.6–6.0 nm) can be achieved by controlling the process pressure. It is observed that with increase in process pressure, the hydrogen bonding in the films shifts from Si–H to Si–H2 and (Si–H2)n complexes. The band gaps of the films are found in the range 1.83–2.11 eV, whereas the hydrogen content remains <9 at.% over the entire range of process pressure studied. The ease of depositing films with tunable band gap is useful for fabrication of tandem solar cells. A correlation between structural and optical properties has been found and discussed in detail.http://dx.doi.org/10.1155/2011/242398 |
| spellingShingle | V. S. Waman A. M. Funde M. M. Kamble M. R. Pramod R. R. Hawaldar D. P. Amalnerkar V. G. Sathe S. W. Gosavi S. R. Jadkar Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure Journal of Nanotechnology |
| title | Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure |
| title_full | Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure |
| title_fullStr | Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure |
| title_full_unstemmed | Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure |
| title_short | Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure |
| title_sort | hydrogenated nanocrystalline silicon thin films prepared by hot wire method with varied process pressure |
| url | http://dx.doi.org/10.1155/2011/242398 |
| work_keys_str_mv | AT vswaman hydrogenatednanocrystallinesiliconthinfilmspreparedbyhotwiremethodwithvariedprocesspressure AT amfunde hydrogenatednanocrystallinesiliconthinfilmspreparedbyhotwiremethodwithvariedprocesspressure AT mmkamble hydrogenatednanocrystallinesiliconthinfilmspreparedbyhotwiremethodwithvariedprocesspressure AT mrpramod hydrogenatednanocrystallinesiliconthinfilmspreparedbyhotwiremethodwithvariedprocesspressure AT rrhawaldar hydrogenatednanocrystallinesiliconthinfilmspreparedbyhotwiremethodwithvariedprocesspressure AT dpamalnerkar hydrogenatednanocrystallinesiliconthinfilmspreparedbyhotwiremethodwithvariedprocesspressure AT vgsathe hydrogenatednanocrystallinesiliconthinfilmspreparedbyhotwiremethodwithvariedprocesspressure AT swgosavi hydrogenatednanocrystallinesiliconthinfilmspreparedbyhotwiremethodwithvariedprocesspressure AT srjadkar hydrogenatednanocrystallinesiliconthinfilmspreparedbyhotwiremethodwithvariedprocesspressure |