Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar Cell
An Al/methyl-red/p-InP solar cell was fabricated via solution-processing method and was characterized by using current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) measurements at room temperature. From dark I-V characteristics, the values of ideality factor and barrier height of the devi...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2009-01-01
|
| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2009/374301 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832556234825269248 |
|---|---|
| author | Ömer Güllü |
| author_facet | Ömer Güllü |
| author_sort | Ömer Güllü |
| collection | DOAJ |
| description | An Al/methyl-red/p-InP solar cell was fabricated via solution-processing method and was characterized by using current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) measurements at room temperature. From dark I-V characteristics, the values of ideality factor and barrier height of the device were calculated as 1.11 eV and 2.02, respectively. It has been seen that the device exhibited a good photovoltaic behavior with a maximum open circuit voltage Voc of 0.38 V and short-circuit current Isc of 2.8 nA under only 200 lx light intensity. The barrier height and acceptor carrier concentration values for the Al/methyl-red/p-InP devices were extracted as 1.27 eV and 3.46×1017 cm-3 from linear region of its C-2-V characteristics, respectively. The difference between Φb (I-V) and Φb (C-V) for Al/methyl-red/p-InP device was attributed the different nature of the I-V and C-V measurements. Also, the energy distribution curves of the interface states and their time constants were obtained from the experimental conductance properties of the Al/methyl-red/p-InP structure at room temperature. The interface state densities and their relaxation times of the device have ranged from 2.96×1012 cm-2eV-1 and 4.96×10-6 s at (1.11-Ev) eV to 5.19×1012 cm-2 eV-1 and 9.39×10-6 s at (0.79-Ev) eV, respectively. It was seen that both the interface state density and the relaxation time of the interface states have decreased with bias voltage from experimental results. |
| format | Article |
| id | doaj-art-f479271772ed4abe8f50bda1dad4a46c |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2009-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-f479271772ed4abe8f50bda1dad4a46c2025-02-03T05:46:00ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2009-01-01200910.1155/2009/374301374301Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar CellÖmer Güllü0Department of Physics, Science and Art Faculty, Batman University, 72060 Batman, TurkeyAn Al/methyl-red/p-InP solar cell was fabricated via solution-processing method and was characterized by using current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) measurements at room temperature. From dark I-V characteristics, the values of ideality factor and barrier height of the device were calculated as 1.11 eV and 2.02, respectively. It has been seen that the device exhibited a good photovoltaic behavior with a maximum open circuit voltage Voc of 0.38 V and short-circuit current Isc of 2.8 nA under only 200 lx light intensity. The barrier height and acceptor carrier concentration values for the Al/methyl-red/p-InP devices were extracted as 1.27 eV and 3.46×1017 cm-3 from linear region of its C-2-V characteristics, respectively. The difference between Φb (I-V) and Φb (C-V) for Al/methyl-red/p-InP device was attributed the different nature of the I-V and C-V measurements. Also, the energy distribution curves of the interface states and their time constants were obtained from the experimental conductance properties of the Al/methyl-red/p-InP structure at room temperature. The interface state densities and their relaxation times of the device have ranged from 2.96×1012 cm-2eV-1 and 4.96×10-6 s at (1.11-Ev) eV to 5.19×1012 cm-2 eV-1 and 9.39×10-6 s at (0.79-Ev) eV, respectively. It was seen that both the interface state density and the relaxation time of the interface states have decreased with bias voltage from experimental results.http://dx.doi.org/10.1155/2009/374301 |
| spellingShingle | Ömer Güllü Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar Cell International Journal of Photoenergy |
| title | Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar Cell |
| title_full | Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar Cell |
| title_fullStr | Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar Cell |
| title_full_unstemmed | Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar Cell |
| title_short | Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar Cell |
| title_sort | impedance and interface properties of al methyl red p inp solar cell |
| url | http://dx.doi.org/10.1155/2009/374301 |
| work_keys_str_mv | AT omergullu impedanceandinterfacepropertiesofalmethylredpinpsolarcell |