New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature
A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested using main of channel length MOSFET devices and compared with others methods.
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2001/92361 |
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| _version_ | 1832549276493807616 |
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| author | Y. Amhouche A. El Abbassi K. Raïs E. Bendada R. Rmaily |
| author_facet | Y. Amhouche A. El Abbassi K. Raïs E. Bendada R. Rmaily |
| author_sort | Y. Amhouche |
| collection | DOAJ |
| description | A new method for drain saturation voltage extraction in submicron MOSFETs is
presented. It is based on measurements of the partial derivative of the impact ionization
rate. The method has been tested using main of channel length MOSFET devices and
compared with others methods. |
| format | Article |
| id | doaj-art-f469f8abb557493598f80055ea850bff |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2001-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-f469f8abb557493598f80055ea850bff2025-02-03T06:11:49ZengWileyActive and Passive Electronic Components0882-75161563-50312001-01-0124212913410.1155/2001/92361New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room TemperatureY. Amhouche0A. El Abbassi1K. Raïs2E. Bendada3R. Rmaily4Laboratoire de Caractérisation des Composants à Semi-conducteurs, Faculté des Sciences Chouaib Doukkali, Departement de Physique, B.P. 20, EL Jadida, MoroccoLaboratoire de Caractérisation des Composants à Semi-conducteurs, Faculté des Sciences Chouaib Doukkali, Departement de Physique, B.P. 20, EL Jadida, MoroccoLaboratoire de Caractérisation des Composants à Semi-conducteurs, Faculté des Sciences Chouaib Doukkali, Departement de Physique, B.P. 20, EL Jadida, MoroccoLaboratoire de la Microélectronique et de l'instrumentation, Faculté des Sciences, B.P. 509 Errachidia, MoroccoLaboratoire de Caractérisation des Composants à Semi-conducteurs, Faculté des Sciences Chouaib Doukkali, Departement de Physique, B.P. 20, EL Jadida, MoroccoA new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested using main of channel length MOSFET devices and compared with others methods.http://dx.doi.org/10.1155/2001/92361MOS transistorDrain saturation voltageSubstrate current. |
| spellingShingle | Y. Amhouche A. El Abbassi K. Raïs E. Bendada R. Rmaily New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature Active and Passive Electronic Components MOS transistor Drain saturation voltage Substrate current. |
| title | New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices
Between Liquid Helium to Room Temperature |
| title_full | New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices
Between Liquid Helium to Room Temperature |
| title_fullStr | New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices
Between Liquid Helium to Room Temperature |
| title_full_unstemmed | New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices
Between Liquid Helium to Room Temperature |
| title_short | New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices
Between Liquid Helium to Room Temperature |
| title_sort | new method for determination of drain saturation voltage in short channel mos devices between liquid helium to room temperature |
| topic | MOS transistor Drain saturation voltage Substrate current. |
| url | http://dx.doi.org/10.1155/2001/92361 |
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