APA (7th ed.) Citation

Amhouche, Y., Abbassi, A. E., Raïs, K., Bendada, E., & Rmaily, R. New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature. Wiley.

Chicago Style (17th ed.) Citation

Amhouche, Y., A. El Abbassi, K. Raïs, E. Bendada, and R. Rmaily. New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature. Wiley.

MLA (9th ed.) Citation

Amhouche, Y., et al. New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature. Wiley.