Near-Infrared All-Silicon Photodetectors
We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/139278 |
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| author | M. Casalino G. Coppola M. Iodice I. Rendina L. Sirleto |
| author_facet | M. Casalino G. Coppola M. Iodice I. Rendina L. Sirleto |
| author_sort | M. Casalino |
| collection | DOAJ |
| description | We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures. |
| format | Article |
| id | doaj-art-f44e625425514e9682da580538cf2a95 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-f44e625425514e9682da580538cf2a952025-02-03T01:08:50ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/139278139278Near-Infrared All-Silicon PhotodetectorsM. Casalino0G. Coppola1M. Iodice2I. Rendina3L. Sirleto4Institute for Microelectronics and Microsystems, National Council of Research, Via P. Castellino 111, 80131 Naples, ItalyInstitute for Microelectronics and Microsystems, National Council of Research, Via P. Castellino 111, 80131 Naples, ItalyInstitute for Microelectronics and Microsystems, National Council of Research, Via P. Castellino 111, 80131 Naples, ItalyInstitute for Microelectronics and Microsystems, National Council of Research, Via P. Castellino 111, 80131 Naples, ItalyInstitute for Microelectronics and Microsystems, National Council of Research, Via P. Castellino 111, 80131 Naples, ItalyWe report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures.http://dx.doi.org/10.1155/2012/139278 |
| spellingShingle | M. Casalino G. Coppola M. Iodice I. Rendina L. Sirleto Near-Infrared All-Silicon Photodetectors International Journal of Photoenergy |
| title | Near-Infrared All-Silicon Photodetectors |
| title_full | Near-Infrared All-Silicon Photodetectors |
| title_fullStr | Near-Infrared All-Silicon Photodetectors |
| title_full_unstemmed | Near-Infrared All-Silicon Photodetectors |
| title_short | Near-Infrared All-Silicon Photodetectors |
| title_sort | near infrared all silicon photodetectors |
| url | http://dx.doi.org/10.1155/2012/139278 |
| work_keys_str_mv | AT mcasalino nearinfraredallsiliconphotodetectors AT gcoppola nearinfraredallsiliconphotodetectors AT miodice nearinfraredallsiliconphotodetectors AT irendina nearinfraredallsiliconphotodetectors AT lsirleto nearinfraredallsiliconphotodetectors |