Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells

The band gap, grain size, and topography of a Cu(In,Ga)Se2 (CIGSe) thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV) and atomic force microscopy (AFM) techniques. From the steep increase in SPV signal the band gap of the CIGSe absorber, In2S3 and ZnO layers are extracte...

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Main Authors: Nima E. Gorji, Ugo Reggiani, Leonardo Sandrolini
Format: Article
Language:English
Published: Wiley 2015-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2015/829530
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author Nima E. Gorji
Ugo Reggiani
Leonardo Sandrolini
author_facet Nima E. Gorji
Ugo Reggiani
Leonardo Sandrolini
author_sort Nima E. Gorji
collection DOAJ
description The band gap, grain size, and topography of a Cu(In,Ga)Se2 (CIGSe) thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV) and atomic force microscopy (AFM) techniques. From the steep increase in SPV signal the band gap of the CIGSe absorber, In2S3 and ZnO layers are extracted and found to be 1.1, 1.3 and 2.6 eV, respectively. Already below the band gap of ZnO layer, a slight SPV response at 1.40 eV photon energies is observed indicating the presence of deep donor states. The root mean square (rms) of the surface roughness is found to be 37.8 nm from AFM surface topography maps. The grain sizes are almost uniform and smaller than 1 μm.
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institution Kabale University
issn 1110-662X
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language English
publishDate 2015-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-f3d67fef6c51491cad3a2fd6d481dbf32025-02-03T01:28:06ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/829530829530Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar CellsNima E. Gorji0Ugo Reggiani1Leonardo Sandrolini2Department of Electrical, Electronic, and Information Engineering, University of Bologna, 40136 Bologna, ItalyDepartment of Electrical, Electronic, and Information Engineering, University of Bologna, 40136 Bologna, ItalyDepartment of Electrical, Electronic, and Information Engineering, University of Bologna, 40136 Bologna, ItalyThe band gap, grain size, and topography of a Cu(In,Ga)Se2 (CIGSe) thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV) and atomic force microscopy (AFM) techniques. From the steep increase in SPV signal the band gap of the CIGSe absorber, In2S3 and ZnO layers are extracted and found to be 1.1, 1.3 and 2.6 eV, respectively. Already below the band gap of ZnO layer, a slight SPV response at 1.40 eV photon energies is observed indicating the presence of deep donor states. The root mean square (rms) of the surface roughness is found to be 37.8 nm from AFM surface topography maps. The grain sizes are almost uniform and smaller than 1 μm.http://dx.doi.org/10.1155/2015/829530
spellingShingle Nima E. Gorji
Ugo Reggiani
Leonardo Sandrolini
Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells
International Journal of Photoenergy
title Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells
title_full Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells
title_fullStr Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells
title_full_unstemmed Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells
title_short Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells
title_sort surface photovoltage spectroscopy and afm analysis of cigse thin film solar cells
url http://dx.doi.org/10.1155/2015/829530
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AT leonardosandrolini surfacephotovoltagespectroscopyandafmanalysisofcigsethinfilmsolarcells