Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping

Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping

In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmission line model currents that were an order higher than for str...

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Bibliographic Details
Main Authors: Tariq Jamil, Abdullah Al Mamun Mazumder, Mafruda Rahman, Muhammad Ali, Jingyu Lin, Hongxing Jiang, Grigory Simin, Asif Khan
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
pulsed MOCVD
AlN (Bulk)
n-type AlN doping
Online Access:https://doi.org/10.35848/1882-0786/adadc2
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