Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2

Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2

Abstract The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. However, defects within the high-κ stack or at the interfaces can significantly...

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Bibliographic Details
Main Authors: Hao-Yu Lan, Shao-Heng Yang, Karim-Alexandros Kantre, Daire Cott, Rahul Tripathi, Joerg Appenzeller, Zhihong Chen
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-025-00527-7
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