Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2
Abstract The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. However, defects within the high-κ stack or at the interfaces can significantly...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-01-01
|
| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-025-00527-7 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832585747734986752 |
|---|---|
| author | Hao-Yu Lan Shao-Heng Yang Karim-Alexandros Kantre Daire Cott Rahul Tripathi Joerg Appenzeller Zhihong Chen |
| author_facet | Hao-Yu Lan Shao-Heng Yang Karim-Alexandros Kantre Daire Cott Rahul Tripathi Joerg Appenzeller Zhihong Chen |
| author_sort | Hao-Yu Lan |
| collection | DOAJ |
| description | Abstract The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. However, defects within the high-κ stack or at the interfaces can significantly degrade the performance of these “interface-only” devices, raising questions regarding their long-term reliability. Here, we study the reliability of monolayer MoS2 FETs on ultra-thin high-κ HfO2. Interestingly, we observe a two-stage threshold voltage shift (ΔV TH) under positive bias temperature stress (PBTS) and hot carrier degradation (HCD). This two-stage ΔV TH is absent in devices fabricated on exfoliated hBN, suggesting that the donor state generation (negative ΔV TH) is induced by atomic-layer-deposition (ALD) processes in HfO2-based devices. Elastic Recoil Detection Analysis (ERDA) indicates that hydrogen, likely from the ALD precursor, is a probable cause, highlighting the need for ALD process refinement to improve 2D FET stability for CMOS compatibility. |
| format | Article |
| id | doaj-art-f1efbe62396a45a18ee87b5db649bd68 |
| institution | Kabale University |
| issn | 2397-7132 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj-art-f1efbe62396a45a18ee87b5db649bd682025-01-26T12:36:14ZengNature Portfolionpj 2D Materials and Applications2397-71322025-01-01911810.1038/s41699-025-00527-7Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2Hao-Yu Lan0Shao-Heng Yang1Karim-Alexandros Kantre2Daire Cott3Rahul Tripathi4Joerg Appenzeller5Zhihong Chen6Electrical and Computer Engineering, Purdue UniversityElectrical and Computer Engineering, Purdue UniversityimecimecElectrical and Computer Engineering, Purdue UniversityElectrical and Computer Engineering, Purdue UniversityElectrical and Computer Engineering, Purdue UniversityAbstract The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. However, defects within the high-κ stack or at the interfaces can significantly degrade the performance of these “interface-only” devices, raising questions regarding their long-term reliability. Here, we study the reliability of monolayer MoS2 FETs on ultra-thin high-κ HfO2. Interestingly, we observe a two-stage threshold voltage shift (ΔV TH) under positive bias temperature stress (PBTS) and hot carrier degradation (HCD). This two-stage ΔV TH is absent in devices fabricated on exfoliated hBN, suggesting that the donor state generation (negative ΔV TH) is induced by atomic-layer-deposition (ALD) processes in HfO2-based devices. Elastic Recoil Detection Analysis (ERDA) indicates that hydrogen, likely from the ALD precursor, is a probable cause, highlighting the need for ALD process refinement to improve 2D FET stability for CMOS compatibility.https://doi.org/10.1038/s41699-025-00527-7 |
| spellingShingle | Hao-Yu Lan Shao-Heng Yang Karim-Alexandros Kantre Daire Cott Rahul Tripathi Joerg Appenzeller Zhihong Chen Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2 npj 2D Materials and Applications |
| title | Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2 |
| title_full | Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2 |
| title_fullStr | Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2 |
| title_full_unstemmed | Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2 |
| title_short | Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2 |
| title_sort | reliability of high performance monolayer mos2 transistors on scaled high κ hfo2 |
| url | https://doi.org/10.1038/s41699-025-00527-7 |
| work_keys_str_mv | AT haoyulan reliabilityofhighperformancemonolayermos2transistorsonscaledhighkhfo2 AT shaohengyang reliabilityofhighperformancemonolayermos2transistorsonscaledhighkhfo2 AT karimalexandroskantre reliabilityofhighperformancemonolayermos2transistorsonscaledhighkhfo2 AT dairecott reliabilityofhighperformancemonolayermos2transistorsonscaledhighkhfo2 AT rahultripathi reliabilityofhighperformancemonolayermos2transistorsonscaledhighkhfo2 AT joergappenzeller reliabilityofhighperformancemonolayermos2transistorsonscaledhighkhfo2 AT zhihongchen reliabilityofhighperformancemonolayermos2transistorsonscaledhighkhfo2 |