Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2
Abstract The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. However, defects within the high-κ stack or at the interfaces can significantly...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-01-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-025-00527-7 |
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| Summary: | Abstract The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. However, defects within the high-κ stack or at the interfaces can significantly degrade the performance of these “interface-only” devices, raising questions regarding their long-term reliability. Here, we study the reliability of monolayer MoS2 FETs on ultra-thin high-κ HfO2. Interestingly, we observe a two-stage threshold voltage shift (ΔV TH) under positive bias temperature stress (PBTS) and hot carrier degradation (HCD). This two-stage ΔV TH is absent in devices fabricated on exfoliated hBN, suggesting that the donor state generation (negative ΔV TH) is induced by atomic-layer-deposition (ALD) processes in HfO2-based devices. Elastic Recoil Detection Analysis (ERDA) indicates that hydrogen, likely from the ALD precursor, is a probable cause, highlighting the need for ALD process refinement to improve 2D FET stability for CMOS compatibility. |
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| ISSN: | 2397-7132 |