Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET
A new two-dimensional analytical model for the capacitance-voltage and noise characteristics of a AlGaN/GaN MODFET is developed. The two-dimensional electron gas density is calculated as a function of device dimensions. The model includes the spontaneous and polarization effects. The contribution of...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/197937 |
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| author | Ramnish Kumar Sandeep K. Arya Anil Ahlawat |
| author_facet | Ramnish Kumar Sandeep K. Arya Anil Ahlawat |
| author_sort | Ramnish Kumar |
| collection | DOAJ |
| description | A new two-dimensional analytical model for the capacitance-voltage and noise characteristics of a AlGaN/GaN MODFET is developed. The two-dimensional electron gas density is calculated as a function of device dimensions. The model includes the spontaneous and polarization effects. The contribution of various capacitances to the performance of the device is shown. The model further predicts the transconductance, drain conductance, and frequency of operation. A high transconductance of 160 mS/mm and a cut-off frequency of 11.6 GHz are obtained for a device of 50 nm gate length. The effect of gate length on the gate length behaviour of the noise coefficients P, R, and C is also studied. The effect of parasitic source and gate resistance has also been studied to evaluate the minimum noise figure. The excellent agreement with the previously simulated results confirms the validity of the proposed model to optimize the device performance at high frequencies. |
| format | Article |
| id | doaj-art-f1d5762c7de441b3acd748b5cde2e2d5 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-f1d5762c7de441b3acd748b5cde2e2d52025-02-03T07:26:12ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/197937197937Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFETRamnish Kumar0Sandeep K. Arya1Anil Ahlawat2Department of ECE, Guru Jambheshwar University of Science and Technology, Teaching Block 7, Hisar, Haryana 125001, IndiaDepartment of ECE, Guru Jambheshwar University of Science and Technology, Teaching Block 7, Hisar, Haryana 125001, IndiaDepartment of CSE, Krishna Institute of Engineering and Technology, Ghaziabad, Uttar Pradesh 201206, IndiaA new two-dimensional analytical model for the capacitance-voltage and noise characteristics of a AlGaN/GaN MODFET is developed. The two-dimensional electron gas density is calculated as a function of device dimensions. The model includes the spontaneous and polarization effects. The contribution of various capacitances to the performance of the device is shown. The model further predicts the transconductance, drain conductance, and frequency of operation. A high transconductance of 160 mS/mm and a cut-off frequency of 11.6 GHz are obtained for a device of 50 nm gate length. The effect of gate length on the gate length behaviour of the noise coefficients P, R, and C is also studied. The effect of parasitic source and gate resistance has also been studied to evaluate the minimum noise figure. The excellent agreement with the previously simulated results confirms the validity of the proposed model to optimize the device performance at high frequencies.http://dx.doi.org/10.1155/2014/197937 |
| spellingShingle | Ramnish Kumar Sandeep K. Arya Anil Ahlawat Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET Advances in Materials Science and Engineering |
| title | Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET |
| title_full | Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET |
| title_fullStr | Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET |
| title_full_unstemmed | Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET |
| title_short | Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET |
| title_sort | microwave analysis for two dimensional c v and noise model of algan gan modfet |
| url | http://dx.doi.org/10.1155/2014/197937 |
| work_keys_str_mv | AT ramnishkumar microwaveanalysisfortwodimensionalcvandnoisemodelofalganganmodfet AT sandeepkarya microwaveanalysisfortwodimensionalcvandnoisemodelofalganganmodfet AT anilahlawat microwaveanalysisfortwodimensionalcvandnoisemodelofalganganmodfet |