Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel Diodes
Remotely empowered wireless sensor networks use different energy resources including photovoltaic solar cells, wireless power transmission, and batteries. As another option the electromagnetic energy available in the ambient can be harvested to power these remote sensors. This is particularly valuab...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2012/694105 |
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| author | Yaksh Rawal Swaroop Ganguly Maryam Shojaei Baghini |
| author_facet | Yaksh Rawal Swaroop Ganguly Maryam Shojaei Baghini |
| author_sort | Yaksh Rawal |
| collection | DOAJ |
| description | Remotely empowered wireless sensor networks use different energy resources including photovoltaic solar cells, wireless power transmission, and batteries. As another option the electromagnetic energy available in the ambient can be harvested to power these remote sensors. This is particularly valuable if it is desirable to harvest the ambient energy available in the wide range of electromagnetic spectrum. This has motivated the research for developing energy harvesting devices which can absorb this energy and produce a DC voltage. Rectenna, an antenna coupled with a rectifier, is the main component used for absorbing electromagnetic radiation at GHz and THz frequencies. Rectifying MIM tunnel diodes are able to operate at tens and hundreds of GHz frequency. As the preliminary steps towards development of high-frequency rectifiers, this paper presents fabrication and DC characterization of two new MIM diodes, Ti-TiO2-Al and Ti-TiO2-Pt. G-V analysis of the fabricated diodes verifies tunneling. Brinkman-Dynes-Rowell model is used to extract oxide thickness of which the derived value is around 9 nm. Ti-TiO2-Pt diode exhibits rectification ratio of 15 at 0.495 V, which is more than rectification ratio reported in earlier works. |
| format | Article |
| id | doaj-art-f18705cfbd6b4c23a506ba386ece8bda |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-f18705cfbd6b4c23a506ba386ece8bda2025-02-03T01:11:01ZengWileyActive and Passive Electronic Components0882-75161563-50312012-01-01201210.1155/2012/694105694105Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel DiodesYaksh Rawal0Swaroop Ganguly1Maryam Shojaei Baghini2Department of Electrical Engineering, IIT-Bombay, National Center for Photovoltaic Research and Education (NCPRE), Mumbai 400076, IndiaDepartment of Electrical Engineering, IIT-Bombay, National Center for Photovoltaic Research and Education (NCPRE), Mumbai 400076, IndiaDepartment of Electrical Engineering, IIT-Bombay, National Center for Photovoltaic Research and Education (NCPRE), Mumbai 400076, IndiaRemotely empowered wireless sensor networks use different energy resources including photovoltaic solar cells, wireless power transmission, and batteries. As another option the electromagnetic energy available in the ambient can be harvested to power these remote sensors. This is particularly valuable if it is desirable to harvest the ambient energy available in the wide range of electromagnetic spectrum. This has motivated the research for developing energy harvesting devices which can absorb this energy and produce a DC voltage. Rectenna, an antenna coupled with a rectifier, is the main component used for absorbing electromagnetic radiation at GHz and THz frequencies. Rectifying MIM tunnel diodes are able to operate at tens and hundreds of GHz frequency. As the preliminary steps towards development of high-frequency rectifiers, this paper presents fabrication and DC characterization of two new MIM diodes, Ti-TiO2-Al and Ti-TiO2-Pt. G-V analysis of the fabricated diodes verifies tunneling. Brinkman-Dynes-Rowell model is used to extract oxide thickness of which the derived value is around 9 nm. Ti-TiO2-Pt diode exhibits rectification ratio of 15 at 0.495 V, which is more than rectification ratio reported in earlier works.http://dx.doi.org/10.1155/2012/694105 |
| spellingShingle | Yaksh Rawal Swaroop Ganguly Maryam Shojaei Baghini Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel Diodes Active and Passive Electronic Components |
| title | Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel Diodes |
| title_full | Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel Diodes |
| title_fullStr | Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel Diodes |
| title_full_unstemmed | Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel Diodes |
| title_short | Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel Diodes |
| title_sort | fabrication and characterization of new ti tio2 al and ti tio2 pt tunnel diodes |
| url | http://dx.doi.org/10.1155/2012/694105 |
| work_keys_str_mv | AT yakshrawal fabricationandcharacterizationofnewtitio2alandtitio2pttunneldiodes AT swaroopganguly fabricationandcharacterizationofnewtitio2alandtitio2pttunneldiodes AT maryamshojaeibaghini fabricationandcharacterizationofnewtitio2alandtitio2pttunneldiodes |