A New Method for the Extraction of Diode Parameters Using a Single Exponential Model
A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (I-V) characteristic and a theoretical arbitrary characteristic. A specific case- the ∆V graph reducing to...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2000-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2000/31390 |
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| _version_ | 1832551294606245888 |
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| author | S. Dib M. De La Bardonnie A. Khoury F. Pelanchon P. Mialhe |
| author_facet | S. Dib M. De La Bardonnie A. Khoury F. Pelanchon P. Mialhe |
| author_sort | S. Dib |
| collection | DOAJ |
| description | A new method for extracting junction parameters of the single diode model is presented.
A least squares method approach considers the deviation ∆V=f(I) between the
experimental current-voltage (I-V) characteristic and a theoretical arbitrary characteristic.
A specific case- the ∆V graph reducing to a straight line–is identified and the
knowledge of the slope and of the intercept with the ordinate axis leads to the determination
of the junction parameters. The method is applied to the characterization of
the emitter-base junction of transistors and the results are discussed. |
| format | Article |
| id | doaj-art-f03f558193ab49d28b1d36215f2b0877 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2000-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-f03f558193ab49d28b1d36215f2b08772025-02-03T06:01:49ZengWileyActive and Passive Electronic Components0882-75161563-50312000-01-0122315716310.1155/2000/31390A New Method for the Extraction of Diode Parameters Using a Single Exponential ModelS. Dib0M. De La Bardonnie1A. Khoury2F. Pelanchon3P. Mialhe4Laboratoire de Physique des Semiconducteurs et Energétique, Faculté des Sciences, Université Libanaise, Fanar. B.P. 90656 Jdeidet, Liban, FranceCentre d'Etudes Fondamentales, Université de Perpignan, Avenue de Villeneuve, Perpignan F-66860, FranceLaboratoire de Physique des Semiconducteurs et Energétique, Faculté des Sciences, Université Libanaise, Fanar. B.P. 90656 Jdeidet, Liban, FranceCentre d'Etudes Fondamentales, Université de Perpignan, Avenue de Villeneuve, Perpignan F-66860, FranceCentre d'Etudes Fondamentales, Université de Perpignan, Avenue de Villeneuve, Perpignan F-66860, FranceA new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (I-V) characteristic and a theoretical arbitrary characteristic. A specific case- the ∆V graph reducing to a straight line–is identified and the knowledge of the slope and of the intercept with the ordinate axis leads to the determination of the junction parameters. The method is applied to the characterization of the emitter-base junction of transistors and the results are discussed.http://dx.doi.org/10.1155/2000/31390Diodecharacteristicjunction parameterslinear correlation coefficient. |
| spellingShingle | S. Dib M. De La Bardonnie A. Khoury F. Pelanchon P. Mialhe A New Method for the Extraction of Diode Parameters Using a Single Exponential Model Active and Passive Electronic Components Diode characteristic junction parameters linear correlation coefficient. |
| title | A New Method for the Extraction
of Diode Parameters Using
a Single Exponential Model |
| title_full | A New Method for the Extraction
of Diode Parameters Using
a Single Exponential Model |
| title_fullStr | A New Method for the Extraction
of Diode Parameters Using
a Single Exponential Model |
| title_full_unstemmed | A New Method for the Extraction
of Diode Parameters Using
a Single Exponential Model |
| title_short | A New Method for the Extraction
of Diode Parameters Using
a Single Exponential Model |
| title_sort | new method for the extraction of diode parameters using a single exponential model |
| topic | Diode characteristic junction parameters linear correlation coefficient. |
| url | http://dx.doi.org/10.1155/2000/31390 |
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