Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates
Understanding and mitigation of substrate RF losses and signal distortion are critical to enable high-performance GaN-on-Si front-end-modules. While the origin of RF losses and consequently a decreased effective substrate resistivity <inline-formula> <tex-math notation="LaTeX">...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10495002/ |
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