Titanium Silicide Formation in Presence of Oxygen
In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, wit...
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| Format: | Article |
| Language: | English |
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Wiley
1992-01-01
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| Series: | Active and Passive Electronic Components |
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| Online Access: | http://dx.doi.org/10.1155/1992/94394 |
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| author | C. Nobili F. Nava G. Ottaviani M. Costato G. De Santi G. Queirolo |
| author_facet | C. Nobili F. Nava G. Ottaviani M. Costato G. De Santi G. Queirolo |
| author_sort | C. Nobili |
| collection | DOAJ |
| description | In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy
and X-ray diffraction measurements have been performed in order to study the effects arising from the
presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging
from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation
of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated
that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a
sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen.
This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest
temperatures used for the formation of low resistivity titanium disilicide. |
| format | Article |
| id | doaj-art-ef191846488d4eeababefebc56782d36 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1992-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-ef191846488d4eeababefebc56782d362025-02-03T01:11:23ZengWileyActive and Passive Electronic Components0882-75161563-50311992-01-0115192610.1155/1992/94394Titanium Silicide Formation in Presence of OxygenC. Nobili0F. Nava1G. Ottaviani2M. Costato3G. De Santi4G. Queirolo5Dipartimento di Fisica Universita' di Modena, via Campi 213/a, Modena 1-41100, ItalyDipartimento di Fisica Universita' di Modena, via Campi 213/a, Modena 1-41100, ItalyDipartimento di Fisica Universita' di Modena, via Campi 213/a, Modena 1-41100, ItalyDipartimento di Fisica Universita' di Modena, via Campi 213/a, Modena 1-41100, ItalySGS, via Olivetti 2, 1-20041 Agrate Brianza, Milano, ItalySGS, via Olivetti 2, 1-20041 Agrate Brianza, Milano, ItalyIn-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen. This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest temperatures used for the formation of low resistivity titanium disilicide.http://dx.doi.org/10.1155/1992/94394Titanium Siliciderf SputteringResistivity vs. TemperatureRutherford Backscattering SpectrometryAuger SpectroscopyX-Ray Diffraction. |
| spellingShingle | C. Nobili F. Nava G. Ottaviani M. Costato G. De Santi G. Queirolo Titanium Silicide Formation in Presence of Oxygen Active and Passive Electronic Components Titanium Silicide rf Sputtering Resistivity vs. Temperature Rutherford Backscattering Spectrometry Auger Spectroscopy X-Ray Diffraction. |
| title | Titanium Silicide Formation in Presence of Oxygen |
| title_full | Titanium Silicide Formation in Presence of Oxygen |
| title_fullStr | Titanium Silicide Formation in Presence of Oxygen |
| title_full_unstemmed | Titanium Silicide Formation in Presence of Oxygen |
| title_short | Titanium Silicide Formation in Presence of Oxygen |
| title_sort | titanium silicide formation in presence of oxygen |
| topic | Titanium Silicide rf Sputtering Resistivity vs. Temperature Rutherford Backscattering Spectrometry Auger Spectroscopy X-Ray Diffraction. |
| url | http://dx.doi.org/10.1155/1992/94394 |
| work_keys_str_mv | AT cnobili titaniumsilicideformationinpresenceofoxygen AT fnava titaniumsilicideformationinpresenceofoxygen AT gottaviani titaniumsilicideformationinpresenceofoxygen AT mcostato titaniumsilicideformationinpresenceofoxygen AT gdesanti titaniumsilicideformationinpresenceofoxygen AT gqueirolo titaniumsilicideformationinpresenceofoxygen |