Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications

Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications

Abstract Digital storage and analog storage shine in different fields mainly due to their strong stability and high information density, respectively, while the freely selective digital and analog resistance switching applications are a matter of great concern. Here, a multi‐functional device integr...

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Bibliographic Details
Main Authors: Siying Tian, Changhao Wang, Yuanjie Wang, Honghao Wang, Chenxi Gao, Weisen Hu, Jia Wei, Fengling Chen, Dapeng Sun, Xu Zheng, Chaobo Li, Chujun Yin
Format: Article
Language:English
Published: Wiley-VCH 2025-06-01
Series:Advanced Electronic Materials
Subjects:
analog and digital resistive switching
ferroelectric semiconductor α‐In2Se3
neuromorphic computing
performance modulation
reconfigurable multifunctional devices
Online Access:https://doi.org/10.1002/aelm.202400734
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https://doi.org/10.1002/aelm.202400734

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