Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
Abstract This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT). In the DCS‐IGBT, an N‐well is formed by phosphorus ion implantation and...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-05-01
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| Series: | IET Circuits, Devices and Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/cds2.12022 |
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