Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer
Poor charge transport mechanism and light‐induced degradation effects are among the key factors leading to the degraded performance of single‐junction amorphous silicon (a‐Si:H) solar cells. Existent photovoltaic configurations, based on amorphous silicon carbide (a‐SiC:H) window layer, have establi...
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Wiley
2017-11-01
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| Series: | IET Circuits, Devices and Systems |
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| Online Access: | https://doi.org/10.1049/iet-cds.2017.0072 |
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| author | Haris Mehmood Tauseef Tauqeer |
| author_facet | Haris Mehmood Tauseef Tauqeer |
| author_sort | Haris Mehmood |
| collection | DOAJ |
| description | Poor charge transport mechanism and light‐induced degradation effects are among the key factors leading to the degraded performance of single‐junction amorphous silicon (a‐Si:H) solar cells. Existent photovoltaic configurations, based on amorphous silicon carbide (a‐SiC:H) window layer, have established efficiencies in the range of 7–10%. Limited performance of such devices has been addressed by replacing a‐SiC:H with a wide band gap (∼2 eV) hydrogenated nano‐crystalline silicon (nc‐Si:H) layer that reportedly exhibits crystalline properties at small scale. Here, the proposed solar cell based on p‐nc‐Si:H/i‐a‐Si:H (buffer)/i‐a‐Si:H/n‐a‐Si:H configuration has been simulated with SILVACO TCAD by analysing window and intrinsic absorber layers thickness, as well as doping concentrations. Along with the engineering of p/i interface, in‐depth evaluation of absorber defects parameters has also been undertaken in order to reduce the recombination rate. The simulated results of an optimised single‐junction device demonstrated an open‐circuit voltage (VOC) of 0.865 V, short‐circuit current density (JSC) of 21.7 mA/cm2, Fill factor (FF) of 0.69 and power conversion efficiency of 12.93%, which is promising when compared with the solar cell already reported. The proposed structure will provide the platform for further development of low cost and efficient multijunction thin‐film amorphous solar cell technology. |
| format | Article |
| id | doaj-art-ed3c6ebea50d4f958f6c7ec867b3c7e2 |
| institution | Kabale University |
| issn | 1751-858X 1751-8598 |
| language | English |
| publishDate | 2017-11-01 |
| publisher | Wiley |
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| series | IET Circuits, Devices and Systems |
| spelling | doaj-art-ed3c6ebea50d4f958f6c7ec867b3c7e22025-02-03T01:32:08ZengWileyIET Circuits, Devices and Systems1751-858X1751-85982017-11-0111666667510.1049/iet-cds.2017.0072Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layerHaris Mehmood0Tauseef Tauqeer1National University of Sciences and Technology (NUST)IslamabadPakistanInformation Technology University (ITU)LahorePakistanPoor charge transport mechanism and light‐induced degradation effects are among the key factors leading to the degraded performance of single‐junction amorphous silicon (a‐Si:H) solar cells. Existent photovoltaic configurations, based on amorphous silicon carbide (a‐SiC:H) window layer, have established efficiencies in the range of 7–10%. Limited performance of such devices has been addressed by replacing a‐SiC:H with a wide band gap (∼2 eV) hydrogenated nano‐crystalline silicon (nc‐Si:H) layer that reportedly exhibits crystalline properties at small scale. Here, the proposed solar cell based on p‐nc‐Si:H/i‐a‐Si:H (buffer)/i‐a‐Si:H/n‐a‐Si:H configuration has been simulated with SILVACO TCAD by analysing window and intrinsic absorber layers thickness, as well as doping concentrations. Along with the engineering of p/i interface, in‐depth evaluation of absorber defects parameters has also been undertaken in order to reduce the recombination rate. The simulated results of an optimised single‐junction device demonstrated an open‐circuit voltage (VOC) of 0.865 V, short‐circuit current density (JSC) of 21.7 mA/cm2, Fill factor (FF) of 0.69 and power conversion efficiency of 12.93%, which is promising when compared with the solar cell already reported. The proposed structure will provide the platform for further development of low cost and efficient multijunction thin‐film amorphous solar cell technology.https://doi.org/10.1049/iet-cds.2017.0072charge transport mechanismlight-induced degradation effectsingle-junction thin-film hydrogenated amorphous silicon solar cellphotovoltaic configurationamorphous silicon carbideamorphous silicon solar cell structure |
| spellingShingle | Haris Mehmood Tauseef Tauqeer Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer IET Circuits, Devices and Systems charge transport mechanism light-induced degradation effect single-junction thin-film hydrogenated amorphous silicon solar cell photovoltaic configuration amorphous silicon carbide amorphous silicon solar cell structure |
| title | Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer |
| title_full | Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer |
| title_fullStr | Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer |
| title_full_unstemmed | Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer |
| title_short | Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer |
| title_sort | modelling and performance analysis of amorphous silicon solar cell using wide band gap nc si h window layer |
| topic | charge transport mechanism light-induced degradation effect single-junction thin-film hydrogenated amorphous silicon solar cell photovoltaic configuration amorphous silicon carbide amorphous silicon solar cell structure |
| url | https://doi.org/10.1049/iet-cds.2017.0072 |
| work_keys_str_mv | AT harismehmood modellingandperformanceanalysisofamorphoussiliconsolarcellusingwidebandgapncsihwindowlayer AT tauseeftauqeer modellingandperformanceanalysisofamorphoussiliconsolarcellusingwidebandgapncsihwindowlayer |