Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor
Abstract Sliding ferroelectric semiconductors can advance the applications of slidetronics in silicon-compatible microelectronic and optoelectronic devices for the post-Moore era. However, traditional sliding ferroelectrics typically require complex artificial stacking to break symmetry, and most of...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-61756-4 |
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