Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process
To prepare a desired negative differential resistance (NDR) device by standard complementary-metal–oxide–semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8692440/ |
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| Summary: | To prepare a desired negative differential resistance (NDR) device by standard complementary-metal–oxide–semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si-base standard 0.18 <italic>μ</italic>m CMOS process without any process modification and a special substrate. In order to reduce the valley current under optical control, a metal mask was added to the NDR device. The results show that the device exhibits good NDR characteristics under either voltage-control or photo-control. Under voltage-control, a low volley current (0.23 pA) and a high peak-to-valley current ratio (1.4 × 10<sup>10</sup>) are obtained at less than 1 V. Under photo-control, the two parameters obtained at less than 0.5 V, are 37 nA and 4827, respectively. Also, the device displays fine <italic>S</italic>-type NDR characteristics and nice maintaining response function under photo-control. These superior photoelectric NDR characteristics endow the device with greatly potential application in the photoelectric logic circuits. |
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| ISSN: | 1943-0655 |