Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors
A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress condition Vg= Vd/2. Large decrease of the resistance...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2000-01-01
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| Series: | Active and Passive Electronic Components |
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| Online Access: | http://dx.doi.org/10.1155/2000/74014 |
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| _version_ | 1832560912637100032 |
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| author | M. Rahmoun E. Bendada A. El Hassani K. Raïs |
| author_facet | M. Rahmoun E. Bendada A. El Hassani K. Raïs |
| author_sort | M. Rahmoun |
| collection | DOAJ |
| description | A method for device characterization is experimented to qualify the relaxable damage in
hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of
the body-drain junction of power HEXFETs is presented for applied stress condition
Vg= Vd/2. Large decrease of the resistance series, of the ideality factor, and of the reverse
recombination current are shown to be related to relaxation time, and are significant
at Vg=–Vd. These effects are discussed and explained by the evolution of the
interface states. |
| format | Article |
| id | doaj-art-ec74ef6bf0f943afb4f439dd769c022f |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2000-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-ec74ef6bf0f943afb4f439dd769c022f2025-02-03T01:26:31ZengWileyActive and Passive Electronic Components0882-75161563-50312000-01-0122314715610.1155/2000/74014Relaxable Damage in Hot-Carrier Stressing of n-MOS TransistorsM. Rahmoun0E. Bendada1A. El Hassani2K. Raïs3Laboratoire de la Microlectronique, de Capteurs et d'Instrumentation, Université My Ismaïl, FST, B.P. 509, Errachidia, MoroccoLaboratoire de la Microlectronique, de Capteurs et d'Instrumentation, Université My Ismaïl, FST, B.P. 509, Errachidia, MoroccoLaboratoire d'Electronique et Traitement de l'Information, Université My Ismaïl, Faculté des Sciences, Meknés, MoroccoLaboratoire de Caractérisation des Composants à Semiconducteur, Université Chouaéb Doukkali, Faculté des Sciences, B.P. 20 El Jadida, MoroccoA method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress condition Vg= Vd/2. Large decrease of the resistance series, of the ideality factor, and of the reverse recombination current are shown to be related to relaxation time, and are significant at Vg=–Vd. These effects are discussed and explained by the evolution of the interface states.http://dx.doi.org/10.1155/2000/74014Stressrelaxationdiode parameters. |
| spellingShingle | M. Rahmoun E. Bendada A. El Hassani K. Raïs Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors Active and Passive Electronic Components Stress relaxation diode parameters. |
| title | Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors |
| title_full | Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors |
| title_fullStr | Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors |
| title_full_unstemmed | Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors |
| title_short | Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors |
| title_sort | relaxable damage in hot carrier stressing of n mos transistors |
| topic | Stress relaxation diode parameters. |
| url | http://dx.doi.org/10.1155/2000/74014 |
| work_keys_str_mv | AT mrahmoun relaxabledamageinhotcarrierstressingofnmostransistors AT ebendada relaxabledamageinhotcarrierstressingofnmostransistors AT aelhassani relaxabledamageinhotcarrierstressingofnmostransistors AT krais relaxabledamageinhotcarrierstressingofnmostransistors |