APA (7th ed.) Citation

Rahmoun, M., Bendada, E., Hassani, A. E., & Raïs, K. Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors. Wiley.

Chicago Style (17th ed.) Citation

Rahmoun, M., E. Bendada, A. El Hassani, and K. Raïs. Relaxable Damage in Hot-Carrier Stressing of N-MOS Transistors. Wiley.

MLA (9th ed.) Citation

Rahmoun, M., et al. Relaxable Damage in Hot-Carrier Stressing of N-MOS Transistors. Wiley.