Lim, S., & Woo, J. Exploiting galvanic effect in Ag–Al alloy ion reservoir of resistive switching device for high-density cross-point array memory system. AIP Publishing LLC.
Chicago Style (17th ed.) CitationLim, Seokjae, and Jiyong Woo. Exploiting Galvanic Effect in Ag–Al Alloy Ion Reservoir of Resistive Switching Device for High-density Cross-point Array Memory System. AIP Publishing LLC.
MLA (9th ed.) CitationLim, Seokjae, and Jiyong Woo. Exploiting Galvanic Effect in Ag–Al Alloy Ion Reservoir of Resistive Switching Device for High-density Cross-point Array Memory System. AIP Publishing LLC.
Warning: These citations may not always be 100% accurate.