Modelling the behavior of metal-oxide-semiconductor structures under thermal field treatment
A quantitative model of the behavior of metal-oxide-semiconductor (MOS) structures subjected to thermal field treatment, particularly in the accumulation and recovery modes of mobile charge in the gate dielectric, is presented. The mobile charge transport is modelled based on ion trapping on polyen...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Herzen State Pedagogical University of Russia
2025-02-01
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| Series: | Physics of Complex Systems |
| Subjects: | |
| Online Access: | https://physcomsys.ru/index.php/physcomsys/article/view/189 |
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