High-temperature Reliability of 1 200 V SiC Power MOSFETs
High-temperature reliability is currently a key issue limiting the application of SiC MOSFET devices in high-temperature environment. It intruduced the DC electrical performance of 1 200 V SiC MOSFETs, which was fabricated based on domestic process platform, and then its high-temperature reliability...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.013 |
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| Summary: | High-temperature reliability is currently a key issue limiting the application of SiC MOSFET devices in high-temperature environment. It intruduced the DC electrical performance of 1 200 V SiC MOSFETs, which was fabricated based on domestic process platform, and then its high-temperature reliability was analyzed after high temperature gate-bias test (HTGB) and high temperature reversebias test (HTRB). The experimental results indicated that after 168 hours HTGB and HTRB tests, breakdown voltage of the fabricated samples is more than 1 200 V and the variations of threshold voltage and on-resistance are less than 15% respectively, suggesting good robustness of these devices. It also confirms the feasibility of the design, process and fabrication of domestic 1 200 V SiC MOSFETs. |
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| ISSN: | 2096-5427 |