APA (7th ed.) Citation

Xiaochuan, D., Xixi, C., Yiyu, W., Huajun, S., Yachao, T., & Yunbing, G. High-temperature Reliability of 1 200 V SiC Power MOSFETs. Editorial Office of Control and Information Technology.

Chicago Style (17th ed.) Citation

Xiaochuan, DENG, CHEN Xixi, WANG Yiyu, SHEN Huajun, TANG Yachao, and GAO Yunbing. High-temperature Reliability of 1 200 V SiC Power MOSFETs. Editorial Office of Control and Information Technology.

MLA (9th ed.) Citation

Xiaochuan, DENG, et al. High-temperature Reliability of 1 200 V SiC Power MOSFETs. Editorial Office of Control and Information Technology.