Anisotropic magnetoresistance and planar Hall effect in an antiferromagnetic insulator-topological insulator heterostructure
The coupling between magnetism and topological states at a topological insulator (TI)-magnetic insulator interface can induce exchange gap opening and spin texture change, resulting in many emergent transport phenomena, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE). Whil...
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American Physical Society
2025-08-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/32h4-l2j6 |
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| _version_ | 1849229416482209792 |
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| author | Yuxin Liu Yongqing Li Jing Teng |
| author_facet | Yuxin Liu Yongqing Li Jing Teng |
| author_sort | Yuxin Liu |
| collection | DOAJ |
| description | The coupling between magnetism and topological states at a topological insulator (TI)-magnetic insulator interface can induce exchange gap opening and spin texture change, resulting in many emergent transport phenomena, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE). While AMR/PHE have been reported in several ferromagnetic insulator-TI heterostructures so far, such effects in antiferromagnetic insulator-TI heterostructure remain elusive. Here, we observe unique features of AMR and PHE in an antiferromagnetic insulator-TI heterostructure MnSe/(Bi,Sb)_{2}Te_{3}. Specifically, at low magnetic fields (H), the in-plane AMR exhibits dips under H applied parallel to the current (H//I) but peaks under the perpendicular geometry (H⊥I), opposite to the zero AMR features in ferromagnetic insulator-TI heterostructures. The low-field PHE is most striking at H//I, but gradually suppressed when H deviates from parallel direction. At high magnetic fields, both AMR and PHE show prominent π-period oscillation. Gate-tuning and temperature-dependence measurements demonstrate that the observed AMR/PHE originate from the interplay between the topological surface state of TI with the spin canting and magnetic phase transition of MnSe. These results not only differentiate the AMR/PHE in TI-based magnetic heterostructure from the pristine TI, but also offer a feasible way to distinguish spin Hall effect and AMR in TI-based heterostructures. |
| format | Article |
| id | doaj-art-e97e86680f4a4e42a43ccf584a8f9af0 |
| institution | Kabale University |
| issn | 2643-1564 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review Research |
| spelling | doaj-art-e97e86680f4a4e42a43ccf584a8f9af02025-08-22T03:57:56ZengAmerican Physical SocietyPhysical Review Research2643-15642025-08-017303318210.1103/32h4-l2j6Anisotropic magnetoresistance and planar Hall effect in an antiferromagnetic insulator-topological insulator heterostructureYuxin LiuYongqing LiJing TengThe coupling between magnetism and topological states at a topological insulator (TI)-magnetic insulator interface can induce exchange gap opening and spin texture change, resulting in many emergent transport phenomena, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE). While AMR/PHE have been reported in several ferromagnetic insulator-TI heterostructures so far, such effects in antiferromagnetic insulator-TI heterostructure remain elusive. Here, we observe unique features of AMR and PHE in an antiferromagnetic insulator-TI heterostructure MnSe/(Bi,Sb)_{2}Te_{3}. Specifically, at low magnetic fields (H), the in-plane AMR exhibits dips under H applied parallel to the current (H//I) but peaks under the perpendicular geometry (H⊥I), opposite to the zero AMR features in ferromagnetic insulator-TI heterostructures. The low-field PHE is most striking at H//I, but gradually suppressed when H deviates from parallel direction. At high magnetic fields, both AMR and PHE show prominent π-period oscillation. Gate-tuning and temperature-dependence measurements demonstrate that the observed AMR/PHE originate from the interplay between the topological surface state of TI with the spin canting and magnetic phase transition of MnSe. These results not only differentiate the AMR/PHE in TI-based magnetic heterostructure from the pristine TI, but also offer a feasible way to distinguish spin Hall effect and AMR in TI-based heterostructures.http://doi.org/10.1103/32h4-l2j6 |
| spellingShingle | Yuxin Liu Yongqing Li Jing Teng Anisotropic magnetoresistance and planar Hall effect in an antiferromagnetic insulator-topological insulator heterostructure Physical Review Research |
| title | Anisotropic magnetoresistance and planar Hall effect in an antiferromagnetic insulator-topological insulator heterostructure |
| title_full | Anisotropic magnetoresistance and planar Hall effect in an antiferromagnetic insulator-topological insulator heterostructure |
| title_fullStr | Anisotropic magnetoresistance and planar Hall effect in an antiferromagnetic insulator-topological insulator heterostructure |
| title_full_unstemmed | Anisotropic magnetoresistance and planar Hall effect in an antiferromagnetic insulator-topological insulator heterostructure |
| title_short | Anisotropic magnetoresistance and planar Hall effect in an antiferromagnetic insulator-topological insulator heterostructure |
| title_sort | anisotropic magnetoresistance and planar hall effect in an antiferromagnetic insulator topological insulator heterostructure |
| url | http://doi.org/10.1103/32h4-l2j6 |
| work_keys_str_mv | AT yuxinliu anisotropicmagnetoresistanceandplanarhalleffectinanantiferromagneticinsulatortopologicalinsulatorheterostructure AT yongqingli anisotropicmagnetoresistanceandplanarhalleffectinanantiferromagneticinsulatortopologicalinsulatorheterostructure AT jingteng anisotropicmagnetoresistanceandplanarhalleffectinanantiferromagneticinsulatortopologicalinsulatorheterostructure |